Model validation of SIM external metrology at the sub-nanometer level

Details Model validation of SIM external metrology at the sub-nanometer level Model validation of SIM external metrology at the sub-nanometer level

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5491.1823n&link_type=abstract

New Frontiers in Stellar Interferometry, Proceedings of SPIE Volume 5491. Edited by Wesley A. Traub. Bellingham, WA: The Intern

Physics

Optics

1

Scientific paper

In order to achieve micro-arcsecond astrometry, SIM must make measurements of various optical pathlengths at the picometer level. In this regime of precision, nearly every simplifying assumption in optics must be reexamined as a potential source of systematic error. SIM makes extensive use of physics-based models to predict the form and level of systematic errors affecting instrument performance. Since many of the modeling areas represent new frontiers in optical modeling, the validation of these physical models is a significant challenge that SIM must meet. In the case of the external metrology truss, the model must account for the imperfections in the corner cubes as well as the distance measuring interferometers ("beam launchers"). This model is being validated using the Kite testbed, a 2-D metrology truss with picometer-level accuracy in

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