(Mn, Sb)-doped PZT thin films with (La, Sr)CoO3 electrodes for uncooled infrared detectors

Details (Mn, Sb)-doped PZT thin films with (La, Sr)CoO3 electrodes for uncooled infrared detectors (Mn, Sb)-doped PZT thin films with (La, Sr)CoO3 electrodes for uncooled infrared detectors

Jul 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4028...66x&link_type=abstract

Proc. SPIE Vol. 4028, p. 66-71, Infrared Detectors and Focal Plane Arrays VI, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

(Mn, Sb) doped-PZT (PMSZT) thin films have been grown on La0.5Sr0.5CoO3-(delta )/Si and La0.5Sr0.5CoO3- (delta )/LaAlO3 substrates for pyroelectric detector arrays. The La0.5Sr0.5CoO3(delta ) thin films, acting as a bottom electrode and as an atomic template for epitaxial growth of PMSZT, were deposited below 550 degrees Celsius thus allowing for integration with silicon technology. The epitaxial PMSZT thin films was designed to achieve high infrared responsivity using (100) oriented LSCO electrodes. The Ni-Cr/PMSZT/LSCO/Si capacitor-like structures show good ferroelectric properties with a large remnant polarization Pr of 40 (mu) C/cm2, a spontaneous polarization Ps of 74 (mu) C/cm2, and a coercive field Ec of 115 kV/cm under an electric field of 650 kV/cm. The PMSZT films have an electrical field breakdown strength in excess of 467 kV/cm, which is much higher than the coercive field. Voltage responsivity Rv of 4062 V/W at 2 Hz and current responsivity Ri of 281 (mu) A/W at 25 Hz was achieved under black body illumination. With CO2 laser illumination at a wavelength equals 10.6 micrometer, an Rv of 4140 V/W at 2 Hz and an Ri of 441 (mu) A/W at 25 Hz was achieved.

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