Minimization of topological defects in ion-induced ripple patterns on silicon

Details Minimization of topological defects in ion-induced ripple patterns on silicon Minimization of topological defects in ion-induced ripple patterns on silicon

Jun 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10f3004k&link_type=abstract

New Journal of Physics, Volume 10, Issue 6, pp. 063004 (2008).

Physics

10

Scientific paper

The evolution of self-organized nanoscale ripple patterns induced by low-energy ion sputtering of silicon is investigated. The quality of the patterns is monitored by calculating a normalized density of topological defects from atomic force microscopy images. A strong dependence of the normalized defect density on the applied ion fluence is observed with a well-pronounced minimum at intermediate fluences. Simulations using the damped Kuramoto Sivashinsky equation yield good agreement with the experiments and are further used to study the dynamics of single pattern defects.

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