Physics – High Energy Physics – High Energy Physics - Phenomenology
Scientific paper
2002-09-02
Nucl.Instrum.Meth. A514 (2003) 9-17
Physics
High Energy Physics
High Energy Physics - Phenomenology
14 pages, 6 figures, to be published in Nucl. Instr. Meth. Phys. Res. A
Scientific paper
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are considered. The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.
Bruzzi Mara
Lazanu Ionel
Lazanu Sorina
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