Micro-Raman scattering of InxGa1-xAs/InP grown by LPMOCVD

Details Micro-Raman scattering of InxGa1-xAs/InP grown by LPMOCVD Micro-Raman scattering of InxGa1-xAs/InP grown by LPMOCVD

Sep 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4919..122m&link_type=abstract

Advanced Materials and Devices for Sensing and Imaging. Edited by Yao, Jianquan; Ishii, Yukihiro. Proceedings of the SPIE, Volu

Computer Science

Scientific paper

The InxGa1-xAs/InP was grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD). We used Raman spectroscopy to characterize the quality of epilayers and measure the strain. Raman spectra from InxGa1-xAs epitaxial layers of various compositions were studied. Raman spectra were obtained at 300K, 248K, 193K, 138K, and 80K. The difference in the frequencies of their GaAs-like LO phonons was to calculate stress for the InGaAs/InP, leading to direct formula for the evaluation of the epilayer stress.

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