Metal-insulator-semiconductor properties of HgTe-CdTe superlattices

Details Metal-insulator-semiconductor properties of HgTe-CdTe superlattices Metal-insulator-semiconductor properties of HgTe-CdTe superlattices

Aug 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jvst....6.2685g&link_type=abstract

(USAF, U.S. Army, DARPA, and American Vacuum Society, 1987 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluri

Physics

7

Carrier Density (Solid State), Crystal Growth, Mercury Cadmium Tellurides, Mis (Semiconductors), Solid-Solid Interfaces, Superlattices, Electric Fields, Energy Gaps (Solid State), Infrared Detectors, Molecular Beam Epitaxy

Scientific paper

This paper reports on the first metal-insulator-semiconductor (MIS) measurements of HgTe-CdTe superlattices. MIS measurements were made on two n-type superlattices grown on (001) CdZnTe and (112) CdCdTe substrates and on a (p) HgTe-CdTe superlattices on an (n) mercury cadmium telluride (MCT) (x = 0.25) heterostructure. The carrier concentrations for the superlattice layers are in the low to mid-10 to the 15th/cu cm range. Storage time measurements indicate that the superlattices are dominated by generation recombination and interface currents for T greater than 130 K, while the heterostructure is dominated by thermal ionization of electrons across the conduction-bands barrier at the interface between the two layers, which was measured to be 110 mV. The breakdown electric fields, as deduced from storage time measurements, are very large for these superlattices (about 30,000 V/cm, equaling high-quality bulk MCT) and are indicative of the large effective masses in the superlattice growth direction.

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