Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements

Details Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3510..186c&link_type=abstract

Proc. SPIE Vol. 3510, p. 186-192, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, Sharad Prasad; Hans

Physics

Scientific paper

In this paper we study oxide deterioration caused by metal contamination using the Mercury-probe and the Surface Photovoltage techniques. It is found that deterioration caused by metal concentration as low as approximately equals 1010 cm-2 can be monitored performing stepped current measurements. This sensitivity makes the Mercury-probe technique attractive for fast-feedback evaluation of gate oxide integrity.

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