Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations

Details Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations

Sep 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9..325e&link_type=abstract

New Journal of Physics, Volume 9, Issue 9, pp. 325 (2007).

Physics

1

Scientific paper

The present contribution focuses on the phenomenology and mechanisms of stress generation in Ge thin films during keV ion bombardment. Experimentally, amorphous Ge (a-Ge) thin films were grown from vapor, and subsequently bombarded with Ar+ ions with energies of up to 3 keV. Stress generation is monitored by a laser beam deflection method. In order to identify the underlying nanoscale physics, molecular dynamics simulations were performed, in which crystalline and (a-Ge) films of different densities were irradiated. Experiments and simulations both show generation of compressive stresses, which saturate at ≈200 MPa and can be attributed to generation of voids with sizes of approximately 1 nm several nanometres below the surface.

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