Measurements of Noise and Static Parameters of CMOS Devices after 3 Mev Proton Irradiation up to 120 Mrad

Details Measurements of Noise and Static Parameters of CMOS Devices after 3 Mev Proton Irradiation up to 120 Mrad Measurements of Noise and Static Parameters of CMOS Devices after 3 Mev Proton Irradiation up to 120 Mrad

Jun 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008apsp.conf..586c&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 10th Conference. Held

Physics

Medical Physics

Scientific paper

Deep submicron CMOS technologies nowadays open several interesting perspectives for analog applications in the field of High Energy Physics (HEP) at hadrons colliders like LHC. However, the exposure to ionizing radiation, typical of HEP applications, influences the static characteristics and the noise performances of deep-submicron MOS transistors employed in detector front-end circuits. The results of characterization measurements before and after protons irradiation carried out on CMOS devices with different form factors (W/L ratio), from a 0.13 μm commercial process at two different dose values, will be presented.

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