Physics – Instrumentation and Detectors
Scientific paper
2004-11-19
Physics
Instrumentation and Detectors
7 pages, 13 figures. Presented at the 2004 IEEE Nuclear Science Symposium, October 18-21, Rome, Italy. Accepted for publicatio
Scientific paper
10.1109/TNS.2005.852666
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT) after heavy non-uniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 x 10^14 e^-/cm^2, well beyond the level causing substrate type inversion. We irradiated one of the two sensors composing the module with a non-uniform profile with sigma=1.4 mm that simulates the conditions encountered in the BaBar experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.
Bettarini S.
Bondioli M.
Bosisio Luciano
Calderini G.
Campagnari C.
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