Measurement of the \{220\} lattice-plane spacing of a $^{28}$Si crystal

Details Measurement of the \{220\} lattice-plane spacing of a $^{28}$Si crystal Measurement of the \{220\} lattice-plane spacing of a $^{28}$Si crystal

2010-10-15

arxiv.org/abs/1010.3088v1

Physics

Atomic Physics

4 pages, 6 figure, 1 table

Scientific paper

The spacing of the \{220\} lattice planes of a $^{28}$Si crystal was measured by combined x-ray and optical interferometry to a $3.5\times 10^{-9}$ relative accuracy. The result is $d_{220}=(192014712.67 \pm 0.67)$ am, at 20.0 $^\circ$C and 0 Pa. This value is greater by $(1.9464 \pm 0.0067)\times 10^{-9} d_{220}$ than the spacing in natural Si, a difference which confirms quantum mechanics calculations. Subsequently, this crystal has been used to determine the Avogadro constant by counting the Si atoms, a key step towards a realization of the mass unit based on a conventional value of the Planck or the Avogadro constants.

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