Physics
Scientific paper
Jul 1990
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990ilwi.work..351s&link_type=abstract
In JPL, California Inst. of Tech., Innovative Long Wavelength Infrared Detector Workshop Proceedings p 351-362 (SEE N91-14379 06
Physics
Cadmium Tellurides, Infrared Detectors, Mercury Cadmium Tellurides, Mercury Tellurides, Molecular Beam Epitaxy, P-N Junctions, Resonant Tunneling, Absorptivity, Additives, Anisotropy, Doped Crystals, Electric Fields
Scientific paper
HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.
Schulman Joel N.
Wu Owen K.
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