Low-temperature hysteresis in the field effect of bilayer graphene

Details Low-temperature hysteresis in the field effect of bilayer graphene Low-temperature hysteresis in the field effect of bilayer graphene

Apr 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011njph...13d3020b&link_type=abstract

New Journal of Physics, Volume 13, Issue 4, pp. 043020 (2011).

Physics

Scientific paper

Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.

Affiliated with

Also associated with

No associations

Rating

Low-temperature hysteresis in the field effect of bilayer graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Low-temperature hysteresis in the field effect of bilayer graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-temperature hysteresis in the field effect of bilayer graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-767517