Low-noise GaAs M.E.S.F.E.T.s

Details Low-noise GaAs M.E.S.F.E.T.s Low-noise GaAs M.E.S.F.E.T.s

Jun 1976

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1976ell....12..309h&link_type=abstract

Electronics Letters, vol. 12, June 10, 1976, p. 309, 310.

Physics

1

Field Effect Transistors, Gallium Arsenides, Low Noise, Metal Surfaces, Lithography, Noise Reduction, Photographic Processing, Schottky Diodes, Superhigh Frequencies

Scientific paper

GaAs MESFETs with optimum noise figures of 1.6 dB at 6 GHz have been
fabricated by projection photolithography. An equation has been
developed for the calculation of optimum noise figure which gives good
agreement between calculated and measured values.

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