Low-noise 10.7 GHz cooled GaAs FET amplifier

Details Low-noise 10.7 GHz cooled GaAs FET amplifier Low-noise 10.7 GHz cooled GaAs FET amplifier

Dec 1981

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1981ell....17..949t&link_type=abstract

Electronics Letters, vol. 17, Dec. 10, 1981, p. 949-951.

Physics

4

Cryogenics, Field Effect Transistors, Gallium Arsenides, Low Noise, Microwave Amplifiers, Transistor Amplifiers, Amplifier Design, Electronic Modules, Microstrip Transmission Lines, Noise Temperature, Power Gain

Scientific paper

A three-stage gallium-arsenide field-effect transistor amplifier giving a noise temperature of 29 K (0.4 dB noise figure) at a physical temperature of 13 K is described. The amplifier utilizes a novel modular construction with coaxial air-lines, sliding Lambda/4 transformers, and packaged NE13783 and MGF1403 FETs. Noise parameters of these devices at 300 K and 13 K are reported.

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