Physics
Scientific paper
Dec 1981
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1981ell....17..949t&link_type=abstract
Electronics Letters, vol. 17, Dec. 10, 1981, p. 949-951.
Physics
4
Cryogenics, Field Effect Transistors, Gallium Arsenides, Low Noise, Microwave Amplifiers, Transistor Amplifiers, Amplifier Design, Electronic Modules, Microstrip Transmission Lines, Noise Temperature, Power Gain
Scientific paper
A three-stage gallium-arsenide field-effect transistor amplifier giving a noise temperature of 29 K (0.4 dB noise figure) at a physical temperature of 13 K is described. The amplifier utilizes a novel modular construction with coaxial air-lines, sliding Lambda/4 transformers, and packaged NE13783 and MGF1403 FETs. Noise parameters of these devices at 300 K and 13 K are reported.
Tomassetti Giuseppe
Weinreb Sander
Wellington K.
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