Low-Frequency Noise Characteristics of GaAs Schottky Diodes Fabricated by In-Situ Electrochemical Process and Comparison to Evaporation Process

Details Low-Frequency Noise Characteristics of GaAs Schottky Diodes Fabricated by In-Situ Electrochemical Process and Comparison to Evaporation Process Low-Frequency Noise Characteristics of GaAs Schottky Diodes Fabricated by In-Situ Electrochemical Process and Comparison to Evaporation Process

Apr 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993stt..conf..404m&link_type=toc

Proceedings of the Fourth International Symposium on Space Terahertz Technology, held March 30 -- April 1, 1993, at UCLA, Los An

Physics

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