Low energy ion identification method using a silicon semiconductor detector telescope

Details Low energy ion identification method using a silicon semiconductor detector telescope Low energy ion identification method using a silicon semiconductor detector telescope

Aug 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994nimpa.348..192d&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 348, Issue 1, p. 192-197.

Physics

3

Scientific paper

A method for discriminating cosmic ions that can be applied at low energies using ΔE-E is presented. The method is tested with a simple detector telescope, consisting of surface barrier silicon detectors. The results obtained irradiating the detector with 32S ions at 795 MeV are presented and then compared with those obtained by applying the Seamster et al. algorithm.

Affiliated with

Also associated with

No associations

Rating

Low energy ion identification method using a silicon semiconductor detector telescope does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Low energy ion identification method using a silicon semiconductor detector telescope, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low energy ion identification method using a silicon semiconductor detector telescope will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1238721