Low energy inductively coupled plasma etching of HgCdTe

Details Low energy inductively coupled plasma etching of HgCdTe Low energy inductively coupled plasma etching of HgCdTe

Oct 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964...61h&link_type=abstract

Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume

Physics

Scientific paper

The high-density inductively coupled plasma etching technique was applied to HgCdTe, while using the RF-powered wafer electrode to provide low plasma energy. By using a CH4/H2/N2/Ar chemistry the HgCdTe etch profiles were studied as a function of mask selectivity, chamber pressure, gas ratio and ICP power. The etch rate was found to decrease as etch depth increasing. The LBIC and I-V measurements were employed to investigate the electrical damage of HgCdTe material caused by plasma bombardment.

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