Lorentz shift measurements in heavily irradiated silicon detectors in high magnetic fields

Details Lorentz shift measurements in heavily irradiated silicon detectors in high magnetic fields Lorentz shift measurements in heavily irradiated silicon detectors in high magnetic fields

2010-05-20

arxiv.org/abs/1005.3629v1

M. Schmanau, Proceedings of Science (2010), PoS(RD09)022

Physics

Instrumentation and Detectors

Accepted publication for RD09 conference in Proceedings of Science

Scientific paper

An external magnetic field exerts a Lorentz force on drifting electric charges inside a silicon strip sensor and thus shifts the cluster position of the collected charge. The shift can be related to the Lorentz angle which is typically a few degrees for holes and a few tens of degrees for electrons in a 4 T magnetic field. The Lorentz angle depends upon magnetic field, electric field inside the sensor and temperature. In this study the sensitivity to radiation for fluences up to 10^16 n/cm^2 has been studied. The Lorentz shift has been measured by inducing ionization with 670 nm red or 1070 nm infrared laser beams injected into the back side of the irradiated silicon sensor operated in magnetic fields up to 8 T. For holes the shift as a function of radiation is increasing, while for electrons it is decreasing and even changes sign. The fact that for irradiated sensors the Lorentz shift for electrons is smaller than for holes, in contrast to the observations in non-irradiated sensors, can be qualitatively explained by the structure of the electric field in irradiated sensors.

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