Physics
Scientific paper
Sep 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685..221y&link_type=abstract
Proc. SPIE Vol. 1685, p. 221-228, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.
Physics
Scientific paper
The monolithic long wavelength infrared focal plane array (FPA) has been developed using low concentration p-type mercury cadmium telluride (MCT) wafer as the substrate. The isolation layer of this MIS device was prepared by evaporation of ZnS after the surface native anodic sulphuration. Its fixed surface charge density and fast interface traps are as low as -6 X 10(superscript 10) cm(superscript -2) and 4 X 10(superscript 10) cm(superscript -2)ev(superscript -1), respectively. At voltages from -4 to +2, the variation of capacitance for photo-MIS capacitors is about 6 pf. Quantum efficiency is up to 60%. The transmissivity of the transparent electrodes simulated by high resistivity CdZnTe substrate is as high as 60% at wavelengths of 8 - 14 micrometers . Transport efficiency of more than 90% can be attained with 45 micrometers transport grid length and more than 60 ns clipping time. Typical breakdown voltage of readout diode made by B ion implantation is over 300 mv at 77 K (for a current of 10 (mu) A). Response wavelengths of FPA have extended to 10.8 micrometers .
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