Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

Details Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

Aug 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5406..317h&link_type=abstract

Infrared Technology and Applications XXX. Edited by Andresen, Bjorn F.; Fulop, Gabor F. Proceedings of the SPIE, Volume 5406

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We have demonstrated the successful growth of mercury cadmium telluride (MCT) infrared detector material on silicon substrates. Growth on silicon increases the maximum achievable array size, reduces manufacturing costs, and paves the way for infrared detector growth directly on multiplexing circuits. In addition, the thermal match with multiplexing circuits eliminates the requirement for complex thinning procedures. Since the crystal lattice of MCT is not matched to that of silicon, an intermediate buffer layer is required. We have developed a buffer layer technique that is compatible with MCT grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Long-wavelength heterostructure device designs were grown using this technique. Test devices and 128x128 focal plane arrays were fabricated by wet etching mesa structures and passivating the mesa side-walls with a thin layer of CdTe. An indium flip-chip technique was used to form interconnects between the detector material and test or multiplexing circuit. At 77K, 50x50μm test devices with a 10.2μm cut off wavelength have been measured with R0A~1x103Ohm cm2 at zero bias and R.A~1x104Ohm cm2 at 0.1V reverse bias. Arrays from this material have been demonstrated with operabilities up to 99.7%.

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