Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Details Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308..261a&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

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Applications

Avalanche Diodes, Indium Gallium Arsenides, Indium Phosphides, Linear Arrays, Photodiodes, Electrical Faults, Infrared Detectors, Infrared Imagery

Scientific paper

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

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