Light localization induced enhancement of third order nonlinearities in a GaAs photonic crystal waveguide

Details Light localization induced enhancement of third order nonlinearities in a GaAs photonic crystal waveguide Light localization induced enhancement of third order nonlinearities in a GaAs photonic crystal waveguide

2008-10-06

arxiv.org/abs/0810.1001v3

Alexandre Baron, Aleksandr Ryasnyanskiy, Nicolas Dubreuil, Philippe Delaye, Quynh Vy Tran, Sylvain Combrie, Alfredo de Rossi,

Physics

Optics

6 pages

Scientific paper

10.1364/OE.17.000552

Nonlinear propagation experiments in GaAs photonic crystal waveguides (PCW) were performed, which exhibit a large enhancement of third order nonlinearities, due to light propagation in a slow mode regime, such as two-photon absorption (TPA), optical Kerr effect and refractive index changes due to TPA generated free-carriers. A theoretical model has been established that shows very good quantitative agreement with experimental data and demonstrates the important role that group velocity plays. These observations give a strong insight into the use of PCWs for optical switching devices.

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