Lasing of donor-bound excitons in ZnSe microdisks

Details Lasing of donor-bound excitons in ZnSe microdisks Lasing of donor-bound excitons in ZnSe microdisks

2007-12-06

arxiv.org/abs/0712.1048v3

Physics

Quantum Physics

4 pages, 3 figures; introduction rewritten

Scientific paper

10.1103/PhysRevB.77.153304

Excitons bound to flourine atoms in ZnSe have the potential for several quantum optical applications. Examples include optically accessible quantum memories for quantum information processing and lasing without inversion. These applications require the bound-exciton transitions to be coupled to cavities with high cooperativity factors, which results in the experimental observation of low-threshold lasing. We report such lasing from fluorine-doped ZnSe quantum wells in 3 and 6 micron microdisk cavities. Photoluminescence and selective photoluminescence spectroscopy confirm that the lasing is due to bound-exciton transitions.

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