Laser-plasma simulations of astrophysical phenomena and novel applications to semiconductor annealing

Details Laser-plasma simulations of astrophysical phenomena and novel applications to semiconductor annealing Laser-plasma simulations of astrophysical phenomena and novel applications to semiconductor annealing

Oct 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003lpb....21..529g&link_type=abstract

Laser and Particle Beams, vol. 21, Issue 4, p.529-534

Physics

Atomic Physics

4

Athermal, Annealing, Blast-Wave, Instability, Supernovae.

Scientific paper

At the frontier of plasma physics and technology are applications of laser-generated plasmas to laboratory simulations of astrophysical phenomena and to industrial processing. This article presents work at the Naval Research Laboratory in both of these areas. We show how laser plasmas are used to measure a blast wave corrugation overstability important in astrophysics. Detailed atomic physics calculations of radiative cooling within the blast front are used to develop a criterion of the existence of the overstability and are used to explain the experimental results. The criterion depends on quantities such as element abundances, densities, temperatures, and blast wave velocities—quantities which can be measured spectroscopically—and therefore used to infer whether astrophysical blast wave nonuniformities are the result of this instability. In other experiments, high-velocity jets are formed in the laboratory using miniature hollow cones. Jets produced by these cones are used to study the physics of jets occurring in supernovae and in star-forming accretion disks. In industrial semiconductor processing, annealing, that is, removing crystal damage and electrically activating the semiconductor, is a critical step. Industrial annealing techniques most often utilize heat generated by an oven, flash lamps, or a low-power laser. During such heating dopants within the semiconductor lattice diffuse and spread. This degrades the performance of circuits in which the individual circuit elements are very close to each other. We are developing an annealing technique in which shock or sound waves generated by a laser plasma are used to anneal the semiconductor. We have demonstrated that the method works over small areas and that it does not lead to significant dopant diffusion.

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