Laser-induced upset of HgCdTe IR detectors

Details Laser-induced upset of HgCdTe IR detectors Laser-induced upset of HgCdTe IR detectors

May 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2474..312n&link_type=abstract

Proc. SPIE Vol. 2474, p. 312-319, Smart Focal Plane Arrays and Focal Plane Array Testing, Marc Wigdor; Mark A. Massie; Eds.

Physics

Scientific paper

The fluence of pulsed lasers of wavelength 4 and 10.6 microns necessary to induce one and two orders of magnitude temporary degradation in the R(subscript 0)A values of Hg(subscript 0.7)Cd(subscript 0.3)Te p/n infrared detectors at 100 K, and Hg(subscript 0.78)Cd(subscript 0.22)Te p/n infrared detectors at 40 K have been calculated. A nonparabolic energy-momentum relationship and temperature dependent energy gap of HgCdTe were used in this calculation. The R(subscript 0)A values used in this calculation were obtained by simultaneously including generation-recombination, diffusion and tunneling mechanisms.

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