Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe

Statistics – Applications

Scientific paper

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Photoconduction And Photovoltaic Effects, Industrial Applications, Ultrafast Processes, Optical Pulse Generation And Pulse Compression, Vacancies, Photodiodes, Phototransistors, Photoresistors

Scientific paper

Femtosecond laser was used to generate micrometer-sized holes in vacancy-doped p type mercury cadmium telluride (HgCdTe). Characterization by laser beam induced current (LBIC) microscope shows obvious electrical type inversion around each hole. Both the intensity of the LBIC signals and the spatial dimension of the type-inversed regions are well comparable with those of n-on-p HgCdTe photodiodes formed by the conventional ion milling technique. The observation demonstrates the potential of laser drilling to be a new tool in fabricating HgCdTe photodiode arrays.

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