Large tunable photonic band gaps in nanostructured doped semiconductors

Details Large tunable photonic band gaps in nanostructured doped semiconductors Large tunable photonic band gaps in nanostructured doped semiconductors

2010-11-05

arxiv.org/abs/1011.2124v1

Physical Review B 82 (2010) 195301

Physics

Optics

6 pages, 4 figures, published

Scientific paper

10.1103/PhysRevB.82.195301

A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.

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