L-band cryogenically-cooled GaAs FET amplifier

Details L-band cryogenically-cooled GaAs FET amplifier L-band cryogenically-cooled GaAs FET amplifier

Oct 1980

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1980mijo...23...73w&link_type=abstract

Microwave Journal, vol. 23, Oct. 1980, p. 73-76. NSF-supported research.

Computer Science

Performance

4

Cryogenic Equipment, Field Effect Transistors, Gallium Arsenides, Parametric Amplifiers, Ultrahigh Frequencies, Closed Cycles, Feedback Circuits, Low Noise, Performance Tests, Research And Development, Signal To Noise Ratios

Scientific paper

A two stage L-band amplifier is described with a noise temperature of 13 plus or minus 1 K at a frequency of 1.3 GHz. Cryogenic cooling occurs in a closed-cycle helium refrigerator. The amplifier does not require high input SWR and it is matched by means of source-inductance feedback instead of an isolator or balancing techniques. Noise theory and the effect of source inductance are investigated.

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