Kinetics of activation of group V impurities in Hg1-xCdxTe alloys

Details Kinetics of activation of group V impurities in Hg1-xCdxTe alloys Kinetics of activation of group V impurities in Hg1-xCdxTe alloys

Aug 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000jap....88.1765s&link_type=abstract

Journal of Applied Physics, Volume 88, Issue 4, pp. 1765-1770 (2000).

Physics

7

Point Defects And Defect Clusters, Interaction Between Different Crystal Defects, Gettering Effect, Diffusion Of Impurities, Impurity Concentration, Distribution, And Gradients, Ii-Vi Semiconductors, Theories And Models Of Crystal Defects

Scientific paper

A kinetic model is developed for the activation of group V impurities in Hg1xCdxTe alloys as acceptors. The model assumes that mercury interstitials are introduced at the surface and diffuse into the alloy. There, they displace group V impurities residing on the metal sublattice and place them on the tellurium sublattice, generating tellurium interstitials. These tellurium interstitials then diffuse back to the top surface, or to climbing dislocations. The rate-controlling process is the out-diffusion of the tellurium interstitials. A key finding is that the conversion rate is inversely proportional to the impurity concentration. The model is found to be in good agreement with published data for the activation of arsenic.

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