Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad

Details Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad

2011-10-28

arxiv.org/abs/1110.6222v2

Physics

Instrumentation and Detectors

presented at TWEPP11, 6 pages, 6 figures

Scientific paper

The Pixel Detector (PXD) of the Belle II experiment at superKEKB accelerator in Japan is based in the DEPFET technology. Two layers of 8+12 modules at a radius of 13 and 22 mm will give a spatial resolution below 10 mm. The radiation level expected in the first layer in ten years of operation is about 10 MRad of total ionizing dose. In order to study the tolerance of the DEPFET technology sixty devices were irradiated using a standard procedure like 60Co gamma source. Different doping types, channel sizes and biasing conditions were studied

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