IR materials producibility

Details IR materials producibility IR materials producibility

Sep 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994sri..reptt....s&link_type=abstract

Quarterly Technical Report No. 8, 1 May - 31 Aug. 1994 SRI International Corp., Menlo Park, CA.

Physics

Optics

Cadmium Tellurides, Focal Plane Devices, Infrared Detectors, Lithium Niobates, Mercury Tellurides, Optical Materials, Point Defects, Semiconductors (Materials), Zinc Selenides, Zinc Tellurides, Gallium Arsenides, Impurities, Mercury Cadmium Tellurides, Nonlinear Optics, Nuclear Binding Energy

Scientific paper

The work summarized covers the eighth quarter of a program with a goal that is threefold: first, to study the properties of native point defects in infrared focal-plane array (IRFPA) active and substrate materials; second, to study the properties of native point defects in two classes of photonic materials, the wide-gap II-VI compounds (ZnSe as the prototype for which impurity properties will also be calculated) and the nonlinear optical materials (LiNbO3 as the prototype); the third, to study the properties of HgZnTe as a very-long-wave infrared (VLWIR) detector material. We have continued the refinement of the calculation of the tellurium antisite-mercury vacancy pair in HgCdTe. We find a binding energy of more than 1 eV. We have developed a strategy for calculating the ionization energies of defects in semiconductors, and have tested the strategy on the arsenic antisite in GaAs with good results. We have begun the calculation of the ionization energies in CdTe and ZnSe, and preliminary results are reported. Transport-related properties have been calculated for HgCdTe and HgZnTe and compared with results using the effective mass approximation.

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