IR materials producibility

Details IR materials producibility IR materials producibility

Jun 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994sri..reptx....s&link_type=abstract

Quarterly Technical Report No. 7, 1 Feb. - 30 Apr. 1994 SRI International Corp., Menlo Park, CA.

Physics

Cadmium Tellurides, Energy Of Formation, Gallium Arsenides, Mercury Tellurides, Semiconductors (Materials), Tellurium, Infrared Detectors, Ionization, Lithium Niobates, Point Defects

Scientific paper

The formation energy for mercury vacancy - tellurium antisite pairs is calculated. We developed a method for calculating the ionization energies of the defects in semiconductors. The electron-phonon interaction-induced band-edge shifts in semiconductors are calculated using accurate band structures. The temperature variation of gaps in GaAs (done to validate our method) and Hg(0.78)Cd(0.22)Te have been calculated and are found to agree well with experiments.

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