Physics
Scientific paper
Feb 1994
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994sri..repts....s&link_type=abstract
Quarterly Report No. 6, Nov. 1993 - 31 Jan. 1994 SRI International Corp., Menlo Park, CA.
Physics
Mercury Cadmium Tellurides, Nuclear Binding Energy, Point Defects, Semiconductors (Materials), Cadmium Tellurides, Energy Of Formation, Infrared Spectra, Ionization, Lithium Niobates, Temperature Dependence
Scientific paper
In this quarter we have completed an extensive paper on native point defects in Hg(0.8)Cd(0.2)Te, and submitted it to Physical Review B. We calculated the binding energy of a mercury vacancy tellurium anti-site defect complex in Hg(0.8)CdTe and estimated the complex density and its consequences on materials processing. The defect formation energies in CdTe and ZnSe, including gradient corrections to the local density approximation, were calculated, and estimates of the neutral defect concentrations in ZnSe were made. We have continued to develop a method to calculate the defect ionization energies in CdTe, ZnSe, and LiNbO3. Preliminary prediction of the defect densities in x=0.17 LWIR Hg(1-x)Zn(x)Te were made and compared to results in HgCdTe. We continued to develop a method to calculate the temperature dependence of the semiconductor bandgaps. Modifications of our thermodynamical codes for the LiNbO3 problem were made so that the stoichiometry and temperature may be specified and the defect densities determined.
Berding M. A.
Muller M. W.
Paxton Anthony T.
Sher Aleksey
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