Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

Details Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998apphl..73..638s&link_type=abstract

Applied Physics Letters, Volume 73, Issue 5, id. 638 (1998).

Physics

17

Ii-Vi Semiconductors, Ii-Vi Semiconductors, Ii-Vi Semiconductors, Doping And Impurity Implantation In Iii-V And Ii-Vi Semiconductors, Molecular, Atomic, Ion, And Chemical Beam Epitaxy, Defects And Impurities: Doping, Implantation, Distribution, Concentration, Etc., Iii-V And Ii-Vi Semiconductors, Ii-Vi Semiconductors

Scientific paper

The p-type activation of arsenic (As) in (211)B mercury cadmium telluride (HgCdTe) grown by molecular beam epitaxy (MBE), with different compositions covering the 3-5 and 8-14 μm atmospheric transmission windows and after annealing at 300 °C is reported. The composition and thickness of the MBE layers were determined from Fourier transform infrared transmission measurements at room temperature. The ionization energies of shallow acceptors related to As in MBE HgCdTe layers with different Cd compositions have been obtained by fitting variable temperature Hall measurement results to a two-band nonparabolic Kane model. The results indicate that As incorporated during the MBE growth can be activated to provide a shallow acceptor level in MBE HgCdTe and the ionization energy of the As acceptor decreases with decreasing Cd composition, in agreement with the theory.

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