Ion beam modification of reactively sputtered TiN thin films

Details Ion beam modification of reactively sputtered TiN thin films Ion beam modification of reactively sputtered TiN thin films

Jul 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008pobeo..84..205p&link_type=abstract

Publications of the Astronomical Observatory of Belgrade, vol. 84, pp. 205-208

Astronomy and Astrophysics

Astronomy

Scientific paper

A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si substrates to a thickness of sim 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x10^15 -- 1 x 10^16 ions/cm^2. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that the as-deposited layers have a columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide. Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed.

Affiliated with

Also associated with

No associations

Rating

Ion beam modification of reactively sputtered TiN thin films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ion beam modification of reactively sputtered TiN thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion beam modification of reactively sputtered TiN thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-788056