Investigation of VLSI Bipolar Transistors Irradiated with Electrons, Ions and Neutrons for Space Application

Details Investigation of VLSI Bipolar Transistors Irradiated with Electrons, Ions and Neutrons for Space Application Investigation of VLSI Bipolar Transistors Irradiated with Electrons, Ions and Neutrons for Space Application

Apr 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006apsp.conf..832d&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS . Proceedings of the 9th Conference . Held

Physics

Medical Physics

Scientific paper

A systematic investigation of radiation effects on a BICMOS technology manufactured by STM has been undertaken. Bipolar transistors were irradiated by neutrons, C, Ar and Kr ions, and recently by electrons. Fast neutrons, as well as other types of particles, produce defects mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs (the so-called Frenkel pairs). Although imparted doses differ largely, the experimental results indicate that the gain (β) variation is mostly related to the non-ionizing energy-loss (NIEL) deposition for neutrons, ions and electrons. The variation of the inverse of the gain degradation, Δ(1/β), is found to be linearly related (as predicted by the Messenger-Spratt equation for neutron irradiations) to the concentrations of the Frenkel pairs generated independently of the kind of incoming particle. For space applications, this linear dependence on the concentration of Frenkel pairs allows to evaluate the total amount of the gain degradation of VLSI components due to the flux of charged particles during the full life of operation of any pay-load. In fact, the total amount of expected Frenkel pairs can be estimated taking into account the isotopic spectra. It has to be point out that in cosmic rays there is relevant flux of electrons and isotopes up to Ni, which are within the range of particles presently investigated.

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