Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays

Details Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..101y&link_type=abstract

Proc. SPIE Vol. 1735, p. 101-108, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Physics

Scientific paper

A theoretical investigation of electrical crosstalk induced by surface channel was made for Hg(subscript 1-x)Cd(subscript x)Te n-on-p photodiode arrays, by using a model based on diode surface channel current theory. An analytic expression of crosstalk, which is an exponential function of the inversion layer charge density, element spacing, p-n junction resistance-area product, and surface electron mobility, was deduced. The dependence of crosstalk on some related device parameters, such as the positive fixed interface charge density, etc., was calculated and discussed. The results show that better control of the substrate surface potential, as well as careful choice of some device parameters, is significant for reducing electrical crosstalk.

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