Intervalley splittings of Si quantum wells

Details Intervalley splittings of Si quantum wells Intervalley splittings of Si quantum wells

2007-11-05

arxiv.org/abs/0711.0575v2

Physics

Quantum Physics

Major revision including the correction of numerical errors

Scientific paper

10.1063/1.2963693

Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the valley splitting caused by the quantum well interface in the previous work [Ref. 10], can be derived self-consistently from the multi-valley effective mass theory. Finite element method is used to solve the multi-valley effective equations. Theoretical predictions are in a reasonably good agreement with the recent experimental observation of valley splitting in a SiO_{2}/Si/SiO_{2} quantum well, which prove the validity of our approach.

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