Intermixing effect on asymmetric quantum well

Details Intermixing effect on asymmetric quantum well Intermixing effect on asymmetric quantum well

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..154c&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

Physics

Scientific paper

Ion implantation enhanced intermixing of quantum well has become an important technology in device fabrication and material modification. We report the intermixing effect in a single asymmetric coupled quantum well (GaAs/AlGaAs) at different ion implantation dose by photoluminescence. More than 80meV of blue shift of the interband transition was observed before rapid thermal annealing process. It indicates that the intermixing has almost finished during the implantation process. A diffusion length of 1nm is obtained by the theoretical analysis.

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