Integrated infrared detectors and readout circuits

Details Integrated infrared detectors and readout circuits Integrated infrared detectors and readout circuits

Jun 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006spie.6206e..39c&link_type=abstract

Infrared Technology and Applications XXXII. Edited by Andresen, Bjørn F.; Fulop, Gabor F.; Norton, Paul R.. Proceedings of the

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The standard process for manufacturing mercury cadmium telluride (MCT) infrared focal plane arrays (FPAs) involves hybridising detectors onto a readout integrated circuit (ROIC). Wafer scale processing is used to fabricate both the detector arrays and the ROICs. The detectors are usually made by growing epitaxial MCT on to a suitable substrate, which is then diced and hybridised on to the ROIC. It is this hybridisation process that prevents true wafer scale production; if the MCT could be grown directly onto the ROIC, then wafer scale production of infrared FPAs could be achieved. In order to achieve this, a ROIC compatible with the growth process needs to be designed and fabricated and the growth and processing procedures modified to ensure survival of the ROIC. Medium waveband IR detector test structures have been fabricated with resistance area product of around 3x104 Ω cm2 at 77K. This is background limited in f/2 and demonstrates that wafer scale production is achievable.

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