Integrated GaAs f.e.t. mixer performance at X band

Details Integrated GaAs f.e.t. mixer performance at X band Integrated GaAs f.e.t. mixer performance at X band

May 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ell....11..199p&link_type=abstract

Electronics Letters, vol. 11, May 1, 1975, p. 199, 200.

Physics

Field Effect Transistors, Gallium Arsenides, Integrated Circuits, Microwave Circuits, Mixing Circuits, Energy Conversion Efficiency, Low Noise, Power Gain, Superhigh Frequencies

Scientific paper

Experiments were performed at X band with GaAs f.e.t.s used as mixer
elements. These studies show that an f.e.t. mixer may exhibit a
conversion gain approaching that of the corresponding amplifier.
Conversion gains as high as 6 dB were measured. Low noise and high
signal-handling capabilities were also demonstrated.

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