InI photodetectors for scintillation spectroscopy

Details InI photodetectors for scintillation spectroscopy InI photodetectors for scintillation spectroscopy

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1734..161s&link_type=abstract

Proc. SPIE Vol. 1734, p. 161-165, Gamma-Ray Detectors, Elena Aprile; Ed.

Physics

Scientific paper

Photoconductive detectors have been developed from a new wide bandgap (E(subscript g) equals 2.01 eV) semiconductor, InI, and these photodetectors are intended for use in scintillation spectroscopy of nuclear radiation. InI single crystals were produced using the Bridgman process and these crystals were characterized by measuring their optical transmission spectrum, micro-hardness, electrical resistivity, and charge transport properties. Photodetectors were fabricated from InI crystal slices by evaporating thin (< 100 angstrom) Pd front contacts, and applying graphite back contacts. These photodetectors showed considerable promise due to their high quantum efficiency (> 60%) in the 300 nm to 600 nm wavelength region and their uniform photo-response over the active detector area. Finally, these photodetectors were coupled to CsI(Tl) scintillator and were successfully tested as spectrometers at room temperature by irradiating the scintillator with 5.5 MeV (alpha) particles ((superscript 241)Am source) and 662 keV (gamma) rays ((superscript 137)Cs source).

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