Infrared imaging using a 128x128-pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors

Details Infrared imaging using a 128x128-pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors Infrared imaging using a 128x128-pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..198b&link_type=abstract

Proc. SPIE Vol. 1735, p. 198-203, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Physics

3

Scientific paper

An Al(subscript x)Ga(subscript 1-x)As/GaAs quantum well infrared photodetector (QWIP) 128 X 128 focal plane array, incorporating integral grating structures for efficient optical coupling have been hybridized to silicon CMOS multiplexes. The demonstrated high uniformity, excellent detectivity, and high yield of operating pixels (99% plus) has resulted in excellent imagery in the 8 - 12 micrometers range, with a low noise equivalent temperature difference (NE(Delta) T) of less than 10 mK, and high image contrast signal to noise ratios (CSNR). We will discuss the figures of merit that govern the image quality in our QWIP focal plane arrays, such as D(superscript *), uniformity, CSNR, maximum input charge to the CMOS multiplex, etc. Our latest results will also be reported.

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