Infrared detection with spontaneous pulsing in multiquantum well structures

Details Infrared detection with spontaneous pulsing in multiquantum well structures Infrared detection with spontaneous pulsing in multiquantum well structures

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..142p&link_type=abstract

Proc. SPIE Vol. 2746, p. 142-151, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

A new method of infrared detection without any preamplifiers is presented. The method is based on well studied multiquantum well (MQW) structures and the injection mode integrate-and-fire infrared detectors using p(superscript +)-n- n(superscript +) structures. A brief introduction to injection mode IR detectors (with p(superscript +)-n-n(superscript +) diodes) is given. A model based on device physics to describe spontaneous pulsing in GaAs/AlGaAs quantum well structures is presented. The model includes space charge generation/recombination mechanisms such as tunneling and impact of injected hot electrons with cold well electrons, with current voltage relations leading to spontaneous pulsing in MQW structures. It is shown with the correct parameters, spontaneous pulsing could be observed in MQW structures at 300 K. The IR photoionization contribution to space charge generation is added to the model to obtain the infrared response. This response can take the form of a change in the pulse rate or pulses being generated for a subthreshold bias conditions. This gives rise to novel IR detectors operating above 77 K up to near room temperature.

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