Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

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Cadmium Mercury Telluride (Cmt), Mercury Cadmium Telluride (Mct), Molecular Beam Epitaxy (Mbe), Metal Organic Vapor Phase Epitaxy (Movpe), Silicon, Polishing Damage, Infrared Focal Plane Array

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