Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

Details Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

Aug 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007jemat..36..864h&link_type=ejournal

Journal of Electronic Materials, Volume 36, Issue 8, pp.864-870

Physics

1

Cadmium Mercury Telluride (Cmt), Mercury Cadmium Telluride (Mct), Molecular Beam Epitaxy (Mbe), Metal Organic Vapor Phase Epitaxy (Movpe), Silicon, Polishing Damage, Infrared Focal Plane Array

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