Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

Details Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..129b&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

Physics

3

Scientific paper

Factors that affect width and aspect ratio in electron cyclotron
resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch
bias and anisotropy are determined by photoresist feature erosion rate.
The physical characteristics of the trenches are attributed to ECR
plasma etch chemistry.

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