Influence of growth transients on interface and composition uniformity of ultra thin In(As,P) and (In,Al,Ga)As epilayers grown by chemical beam epitaxy

Details Influence of growth transients on interface and composition uniformity of ultra thin In(As,P) and (In,Al,Ga)As epilayers grown by chemical beam epitaxy Influence of growth transients on interface and composition uniformity of ultra thin In(As,P) and (In,Al,Ga)As epilayers grown by chemical beam epitaxy

Jan 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420..654n&link_type=abstract

Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 654-659 (1998).

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Molecular, Atomic, Ion, And Chemical Beam Epitaxy

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In this work, measurements of epitaxial growth rate transients for multiple quantum wells (MQWs) in chemical beam epitaxy (CBE) have been made. Mass spectrometry measurements of typical growth conditions were made of gas source species of the InAsxP1-x/InP system, while reflection high-energy electron diffraction (RHEED) measurements were made for the GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs systems. The results of these experiments went directly into predicting the transient growth rate of thin layers for multi-quantum well photovoltaic devices. The data obtained using these techniques resulted in an improved growth interruption sequence for MQW structures in the InAsxP1-x/InP system. Improvements in overall material quality have been observed by high resolution X-ray diffraction (HRXRD). HRXRD measurements of the InAsxP1-x/InP structures yield sharp satellite peaks revealing the possibility of achieving nearly perfect interfaces. From low temperature photoluminescence, narrow emission linewidths from quantum wells indicate an enhanced compositional uniformity, and room temperature photocurrent spectroscopy reveals an improvement in device performance.

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