Influence of growth transients on interface and composition uniformity of ultra thin In(As,P) and (In,Al,Ga)As epilayers grown by chemical beam epitaxy

Statistics – Applications

Scientific paper


  [ 0.00 ] – not rated yet Voters 0   Comments 0

Please leave your Comment & Rating

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.