Induced Damages in Power Mosfets after Heavy Ions Irradiation

Details Induced Damages in Power Mosfets after Heavy Ions Irradiation Induced Damages in Power Mosfets after Heavy Ions Irradiation

Apr 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010apsp.conf..560b&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 11th Conference. Held

Physics

Medical Physics

Scientific paper

The usage of power MOSFETs in a hostile radiation environment, such as outer space and high energy physics experiments, is subordinated to their ability to tolerate the mechanisms initiated by the passage of energetic ions through the active volumes of the device. In this paper, we briefly present the main results obtained during our continuative study into the reliability of power MOSFETs during heavy ion impacts.

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